ammp-6522 7 to 20 ghz gaas mmic lna/irm receiver in smt package data sheet features ? 5x5 mm surface mount package ? integrated low noise amplifer ? integrated image reject mixer ? 50 input and output match ? single supply bias pin specifcations vd = 4.0 v (75 ma), vg = -1.0 v (0.1 ma) ? rf frequency: 7 to 20 ghz ? if frequency: dc to 3.5 ghz ? conversion gain (rf/if): 13 db ? input intercept point: -4 dbm ? image suppression: 15 db ? total noise figure: 2.4 db application ? microwave radio systems ? satellite vsat, dbs up/down link ? lmds & pt-pt mmw long haul ? broadband wireless access (including 802.16 and 802.20 wimax) ? wll and mmds loops functional block diagram description avagos ammp-6522 is an easy-to-use broadband inte - grated receiver in a surface mount package. the mmic includes a 3-stage lna to provide gain amplification and a gate-pumped image-reject mixer for frequency translation. the overall receiver performs single side band down-conversion in the 7 to 20 ghz rf signal range. the lo and rf are matched to 50 . the if output is provided in 2-port format where an external 90-degree hybrid can be utilized for full image rejection. the lna requires a 4 v, 75 ma power supply, where the mixer bias is a simple -1 v, 0.1 ma. the mmic is fabricated using phemt technology. the surface mount package allows elimination of chip & wire assembly for lower cost. this mmic is a cost effective alternative to multi- chip solution that have higher loss and complex assem - bly. package diagram attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) :40v esd human body model (class 1a) :150v refer to avago technologies application note a004r: electrostatic discharge, damage and control. note: msl rating = level 2a pin 1 2 3 4 5 6 7 8 function if1 nc if2 lo vg nc vd rf 7 6 5 1 2 3 4 8 top view package base: gnd rf if1 nc if2 vd nc vg lo 1 2 3 7 5 6 4 8
2 electrical specifcations 1. small/large -signal data measured in a fully de-embedded test fxture form ta = 25c. 2. pre-assembly into package performance verifed 100% on-wafer per ammc-6522 published specifcations. 3. this fnal package part performance is verifed by a functional test correlated to actual performance at one or more frequencies. 4. specifcations are derived from measurements in a 50 ? test environment. aspects of the amplifer performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5. nf is measure on-wafer. additional bond wires (-0.2nh) at input could improve nf at some frequencies. table 1. rf electrical characteristics ta=25c, vd=4.0v, vg=-1v, zo=50 ?, lo=+15dbm, if=2ghz [1] parameter rf=8ghz, lo=10ghz rf=18ghz, lo=20ghz unit comment min typ max min typ max noise figure into 50 ?, nf 2.6 3.3 3 3.3 db conversion gain, cg 12 13 12 14 db input third order intercept, iip3 -8 -6 -5 -0.4 dbm image rejection, sup 15 29 15 30 db note: 1. all tested parameters are guaranteed with the following measurement accuracy: rf=8ghz: 0.6db for conversion gain, 10db for irr, 0.5db for nf, 0.8dbm for iip3 rf=18ghz: 1.8db for conversion gain, 1.6db for irr, 0.6db for nf, 1.7dbm for iip3 table 2. recommended operating range 1. ambient operational temperature ta = 25c unless otherwise noted. 2. channel-to-backside thermal resistance (tchannel (tch) = 34c) as measured using infrared microscopy. thermal resistance at backside temperature (tb) = 25c calculated from measured data. description min. typical max. unit comments drain supply current, id 75 95 ma vd = 4.0 v drain supply voltage, vd 3 4 5 v gate supply voltage, vg -1.2 -1.0 -0.8 v ig = 0.1ma rf frequency, rffreq 7 20 ghz lo frequency, lofreq 5 22 ghz if frequency, iffreq [1] dc 3.5 ghz lo drive power, lo +10 +15 +22 dbm note: 1. use if = dc with caution. please see biasing and operation for more details.
3 table 3. thermal properties parameter test conditions value thermal resistance, q jc ambient operational temperature ta = 25c channel-to-backside thermal resistance tchannel(tch)=34c thermal resistance at backside temperature tb=25c q jc = 27 c/w absolute minimum and maximum ratings table 4. minimum and maximum ratings description pin min. max. unit comments drain to ground supply voltage, vd 5.5 v gate to ground voltage, vg +0.8 v drain current , id 100 ma gate current, ig 1 ma rf cw input power, pin 10 dbm cw channel temperature, tch +150 c storage temperature, tstg -65 +150 c maximum assembly temperature, tmax 260 c 20 second maximum notes: 1. operation in excess of any one of these conditions may result in permanent damage to this device.
4 ammp-6522 typical performance [1,2] (t a = 25c, vd = 4 v, id = 75 ma, v g = -1 v, i g = 0 ma, z in = z out = 50 ), if freq = 2 ghz, lo power = +15 dbm unless noted) figure 4. typical input ip3 figure 3. return loss at rf & lo ports figure 2. typical noise fgure figure 1. receiver conversion gain figure 6. input ip3 vs. lo power (rf = 15 ghz) figure 5. conv gain vs. lo power (rf = 15 ghz) figure 8. input ip3 at two if frequencies figure 7. lsb conversion gain at two if frequencies 20 10 0 -10 -20 6 8 10 12 14 16 18 20 frequency (ghz) conv gain (db) lsb usb 5 4 3 2 1 0 6 8 10 12 14 16 18 20 frequency (ghz) noise figure (db) 0 -10 -20 -30 0 10 20 30 40 50 frequency (ghz) return loss (db) rf lo 5 0 -5 -10 6 8 10 12 14 16 18 20 frequency (ghz) iip3 (dbm) 20 10 0 -10 -6 -2 2 6 10 14 18 lo power (dbm) conv gain (db) lsb usb 0 -5 -10 -15 -20 -5 0 5 10 15 20 lo power (dbm) iip3 (dbm) 20 15 10 5 0 6 8 10 12 14 16 18 20 frequency (ghz) conv gain (db) if = 1 ghz if = 2 ghz 2 0 -2 -4 -6 -8 -10 6 8 10 12 14 16 18 20 frequency (ghz) iip3 (dbm) if = 1 ghz if = 2 ghz
5 18 16 14 12 10 6 8 10 12 14 16 18 20 frequency (ghz) conv gain (db) vg = -1.2 v vg = -1.1 v vg = -1.0 v vg = -0.9 v 2 0 -2 -4 -6 -8 -10 6 8 10 12 14 16 18 20 frequency (ghz) input ip3 (dbm) vg = -1.2 v vg = -1.1 v vg = -1.0 v vg = -0.9 v 20 15 10 5 0 6 8 10 12 14 16 18 20 frequency (ghz) conv gain (db) 4 v 3 v 5 v 5 4 3 2 1 0 6 8 10 12 14 16 18 20 frequency (ghz) noise figure (db) 4 v 3 v 5 v 0 -10 -20 -30 0 10 20 30 40 50 frequency (ghz) return loss (db) 25c -40c 85c 5 0 -5 -10 6 8 10 12 14 16 18 20 frequency (ghz) iip3 (dbm) 4 v 3 v 5 v 0 -10 -20 -30 0 10 20 30 40 50 frequency (ghz) lo return loss (db) 25c -40c 85c 5 4 3 2 1 0 6 8 10 12 14 16 18 20 frequency (ghz) noise figure (db) 25c -40c 85c ammp-6522 typical performance (cont.) [1,2] (t a = 25c, vd = 4 v, id = 75 ma, v g = -1 v, i g = 0 ma, z in = z out = 50 ), if freq = 2 ghz, lo power = +15 dbm unless noted) figure 9. conversion gain over vg figure 12. noise fgure over vd figure 11. receiver conversion gain over vd figure 10. input ip3 over vga figure 14. input ip3 over vd figure 13. return loss at rf over temperature figure 16. noise fgure over temperature figure 15. return loss at lo over temperature notes: 1. s-parameters are measured with r&d eval board as shown in figure 19. board and connector efects are included in the data. 2. noise figure is measured with r&d eval board as shown in figure 19, and with a 3-db pad at input. board and connector losses are already de- embeded from the data.
6 biasing and operation the ammp-6522 is normally biased with a positive drain supply connected to the vd pin and a negative gate voltage connected to the vg pin through bypass capacitors as shown in figure 17. the recommended drain supply voltage is 4 v and gate bias voltage is -1 v. the corresponding currents are 75 ma and 0.1 ma re - spectively. the typical required lo level is +15 dbm and it should come from a low noise driver to ensure that overall front end nf is low. the image rejection performance is dependent on the selection of the if quadrature hybrid. the performance of the if hybrid as well as the phase balance and vswr of the interface to the ammp-6522 will affect the overall front end performance. there is minimal performance degradation if vdd is lowered to 3 v or raised to 5 v. if lower current is re - quired, then vd = 3 v will provide considerably similar rf performance. figure 17. application of receiver with if balun the recommended vg is -1 v. however, depending on the operating frequency, vg can be changed to achieve better performance for that particular frequency. please refer to figures 9 and 10 for how to best select the appropriate vg for the intended frequency of operation. theoretically if frequencies can be as low as dc. however, when direct conversion is used (if = dc), a so-called phenomenon dc-offset could occur at the two if outputs. in most practical applications, if should be more than a few hundreds khz to avoid dc-offset cor - rection. refer the absolute maximum ratings table for allowed dc and thermal condition. rf if1 lsb nc if2 vd vd usb lo if rf 1000 pf nc vg lo lo +15 dbm if 1-3.5 ghz usb top view package base: gnd if vg 1000 pf lsb
for product information and a complete list of distributors, please go to our website: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2013 avago technologies. all rights reserved. av02-0244en - july 8, 2013 ammp-6522 part number ordering information part number devices per container container AMMP-6522-BLKG 10 antistatic bag ammp-6522-tr1g 100 7 reel ammp-6522-tr2g 500 7 reel package dimension, pcb layout and tape and reel information please refer to avago technologies application note 5520, amxp-xxxx production assembly process (land pattern a).
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